Single-bit full adder and logic gate based on synthetic antiferromagnetic bilayer skyrmions

Skyrmion-based devices are promising candidates for non-volatile memory and low-delay time computation. Many skyrmion-based execute operation by controlling skyrmion trajectory, which can be impeded the Hall effect. Here, design of arithmetic built on synthetic antiferromagnetic (SyAF) structures is presented, where structure greatly suppress In this study, operations half adder, full XOR logic gate executed introducing geometric notches tilted edges, annihilate or diverge skyrmion. Performance these evaluated, delay energy-delay product single-bit adder 1.95 ns 2.50 × 10?22 Js, only 12% 79% those previously proposed adder. This improvement significant in construction ripple-carry adder-subtractor. Therefore, our SyAF device a candidate to develop high-speed spintronic devices.